What is 3D V-NAND and how does it differ from existing technology?
Samsung’s unique and innovative 3D V-NAND flash memory architecture is a breakthrough in overcoming the density limitations, performance and endurance of today’s conventional planar NAND architecture. 3D V-NAND is fabricated by stacking 32 cell layers vertically over one another rather than decreasing the cells dimensions and trying to fit itself onto a fixed horizontal space resulting in higher density and better performance utilizing a smaller footprint.
Help maximise daily computing with TurboWrite technology for powerful read/write speeds
Help maximise your everyday computing experience with Samsung’s TurboWrite technology with powerful read/write performance . It achieves up to 1.9x faster random write speeds for 120/250 GB models compared to the Samsung SSD 840 EVO**. The Samsung SSD 850 EVO delivers great performance in sequential read (540MB/s) and write (520MB/s) speeds. Plus, you also gain great random write performance in QD for client PC usage scenario.
*PCmark7 (250GB ) : 6700 (Samsung SSD 840 EVO) > 7600 (Samsung SSD 850 EVO)
**Random Write(QD32,120GB) : 36,000 IOPS(Samsung SSD 840 EVO) > 88,000 IOPS(Samsung SSD 850 EVO)
Get into the fast lane with the improved RAPID mode
Samsung’s MagicianTM software which provides Rapid Mode for fast processing data speeds* on a system level by utilizing unused PC memory (DRAM) as cache storage. Samsung's newest Magician has increased the maximum memory usage in Rapid mode from 1 GB, in the previous Samsung SSD 840 EVO version, to up to 4 GB with the Samsung SSD 850 EVO when implementing 16 GB of DRAM.
*PCMARK7 RAW(250GB) : 7500 > 15000(Rapid mode)
Endurance and reliability bolstered by 3D V-NAND technology
The Samsung SSD 850 EVO is designed to deliver endurance and reliability by doubling the TBW* when compared to the previous generation Samsung SSD 840 EVO** and is backed by a 5 year warranty^. The Samsung SSD 850 EVO through minimized performance degradation helps provide sustained performance improvements of up to 30% compared to the Samsung SSD 840 EVO***.
*TBW : Total Bytes Written
**TBW : 43(Samsung SSD 840 EVO) > 75(Samsung SSD 850 EVO 120/250GB),150(Samsung SSD 850 EVO 500/1TB)
***Sustained Performance(250GB) : 3300 IOPS(Samsung SSD 840 EVO) > 6500 IOPS(Samsung SSD 850 EVO), Performance measured after 12 hours “Random Write” test ^ In addition to a consuer